Elenco Attività

Devices for Large Area Electronics


	This activity is mainly focused on devices for large area electronic applications, such as flat panel displays, sensors and smart user interfaces. A strong effort is concentrated on the development of low temperature processes to fabricate devices on polymeric substrates for flexible display and electronic applications. In particular, the group has developed know-hows on polycrystalline silicon thin film transistors (TFTs), made by excimer laser crystallization technique, organic TFTs, using an innovative technology of buffer layers for devices based on pentacene. More recently, the group has started new activities in the field of nanostructured materials (Si nanowires), for both sensor and photovoltaic applications, and oxide semiconductors, for TFT applications.
	Group Leader: Guglielmo Fortunato

Power, Rf devices and passive components for high performance power electronics

The demand to increase energy efficiency of our society involves the development of electronics systems towards zero loss. This is particularly true for power electronics, where up to the 30% of energy is lost in the system. High performance power devices are required. Due to the approaching of Si physical limits, the group concentrates its attention beyond the Si era considering development and implementation of innovative semiconductors (wide bandgap, SiC, GaN, AlN, Ge), advanced multi-functional materials (oxides, colossal k dielectrics, graphene) and innovative technologies (mesoscopic electronics, 2DEG devices, graphene electronics, nanosystems).

Group Leader: Vito Raineri

New processes and advanced equipments for the production of silicon carbide wafers

In the field of power devices realized on silicon carbide (SiC) the main effort of the international community is devoted to the increase of the quality of the material, to the increase of the dimension of the wafer and to the wafer cost reduction. In this field is located the research activity of the research group. The research activity is focalized on the developing of the following points:

CVD and PVT reactors for the growth of silicon carbide substrate and for the epitaxial growth;
Growth processes with new precursors;
Simulation codes of the reactors and the growth processes;
Characterization techniques of silicon carbide.

Group Leader: Francesco La Via

Advanced methodologies for micro and nano-electronic devices


	This research activity aims to the realization of electronic devices through the use of innovative methodologies, both experimental and theoretical. It is organized through some main branches in the field of micro and nanostructures, from the synthesis of Carbon nanostructures, purification and nano-manipulation for applications in nanoelectronic and sensing technologies, to the realization of Si based microelectronics on plastic substrate, for flexible low cost electronics to be integrated in displays, clothes, goods. Furthermore, high efficiency photovoltaic materials and processing, based on Si nanocrystals, Si thin films crystallized by infra-red laser beam, hybrid inorganic/organic structures, is pursued. The experimental activities are sustained by the development of theoretical models and relative numerical codes for the description of the observed phenomena and the design of experiments and devices.
	Group Leader: Antonino La Magna

New basic Si devices beyond the CMOS scaling


	The development of microelectronics has been so far largely dominated by CMOS scaling. But this approach is now facing physical and economics limits, so that most of the industries of microelectronics and related sectors are pushing other routes for their evolution. Novel back-end solutions to implement complex devices such as memories, sensors, and energy harvesting on CMOS chips are very actively pursued. New opportunities also come from the area of Si photonics and photovoltaics. In our group we are studying these opportunities in a few, well defined areas. Our focus is on device characterization and physical modeling, in strong sinergy with Industry. In particular, one of us (S. Lombardo) is collaborating with temporary address at STMicroelectronics to better connect the basic research aspects with the application needs.
	Group Leader: Salvatore Lombardo

Devices for Large Area Electronics


	This activity is mainly focused on devices for large area electronic applications, such as flat panel displays, sensors and smart user interfaces. A strong effort is concentrated on the development of low temperature processes to fabricate devices on polymeric substrates for flexible display and electronic applications. In particular, the group has developed know-hows on polycrystalline silicon thin film transistors (TFTs), made by excimer laser crystallization technique, organic TFTs, using an innovative technology of buffer layers for devices based on pentacene. More recently, the group has started new activities in the field of nanostructured materials (Si nanowires), for both sensor and photovoltaic applications, and oxide semiconductors, for TFT applications.
	Group Leader: Guglielmo Fortunato

Power, Rf devices and passive components for high performance power electronics

Group Leader: Vito Raineri

New processes and advanced equipments for the production of silicon carbide wafers

CVD and PVT reactors for the growth of silicon carbide substrate and for the epitaxial growth;
Growth processes with new precursors;
Simulation codes of the reactors and the growth processes;
Characterization techniques of silicon carbide.

Group Leader: Francesco La Via

Advanced methodologies for micro and nano-electronic devices


	This research activity aims to the realization of electronic devices through the use of innovative methodologies, both experimental and theoretical. It is organized through some main branches in the field of micro and nanostructures, from the synthesis of Carbon nanostructures, purification and nano-manipulation for applications in nanoelectronic and sensing technologies, to the realization of Si based microelectronics on plastic substrate, for flexible low cost electronics to be integrated in displays, clothes, goods. Furthermore, high efficiency photovoltaic materials and processing, based on Si nanocrystals, Si thin films crystallized by infra-red laser beam, hybrid inorganic/organic structures, is pursued. The experimental activities are sustained by the development of theoretical models and relative numerical codes for the description of the observed phenomena and the design of experiments and devices.
	Group Leader: Antonino La Magna

New basic Si devices beyond the CMOS scaling


	The development of microelectronics has been so far largely dominated by CMOS scaling. But this approach is now facing physical and economics limits, so that most of the industries of microelectronics and related sectors are pushing other routes for their evolution. Novel back-end solutions to implement complex devices such as memories, sensors, and energy harvesting on CMOS chips are very actively pursued. New opportunities also come from the area of Si photonics and photovoltaics. In our group we are studying these opportunities in a few, well defined areas. Our focus is on device characterization and physical modeling, in strong sinergy with Industry. In particular, one of us (S. Lombardo) is collaborating with temporary address at STMicroelectronics to better connect the basic research aspects with the application needs.
	Group Leader: Salvatore Lombardo

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