High power Semiconductor laser facility
Semiconductor laser ensures high power in few milliseconds annealing. This equipment take the advantage typical of laser systems of heating materials with high ramp rates, up to 106 °C/s, but allows a careful control of the annealing temperature below the melting point. This results in effective crystallization of micron-thick amorphous Si layers and synthesis of Si nanocrystals for solar cells, full crystallization of hydrogen rich a-Si layers without void formation or film degradation and formation of highly active doped junction with no appreciable dopant diffusion. The system source is a CW 600 W GaAs diodes array which is focused on the sample reaching a maximum power density of 300 kW/cm2 and two step by step motors to control annealing time from 1 to 170 ms on wafers up to 8 inches.
Staff contact: Giovanni Mannino
