Inductively coupled plasma etching
The Roth & Rau Microsys 400 ICP-RIE (inductively coupled plasma) is a special system for plasma etching of different materials (e.g. Si, SiO2, Si3N4, GaN, SiC) at substrates of size up to 12 inches. The system includes a cylindrical vacum chamber, a helium back side coolable carrier to substrate handling , pumping system, plasma generation and a spectrometer to detection etching end point. A separete load-lock system (equipped with separate pumping system) allows the automatic loading and unloading of the substrates to the process chamber. Several reactive gases are used, such as chlorine, borane trichloride, sulfur hexafluoride and trifluoromethane.
Staff contact: Salvatore Di Franco
