Spreading resistance profiling lab
The spreading resistance probe is one of the most widespread analytical techniques applied to electrical activation studies in Si. It is being heavily employed by both research and industry to determine one dimensional charge carrier concentration distributions of ion implants, epitaxial and diffusion layers. Two metallic probes, between which a small potential of 5 mV is applied, are used to quantify the resistance variations as a function of depth. Depth information is obtained by stepping down the probes along a bevelled surface of the sample. The acquired resistance profile is then computed and converted into resistivity and carrier concentration distributions by means of calibration curves, mobility parameters of charge carriers in monocrystalline Si and particular algorithms, which correct for sampling volume effects.
Staff contact: Markus Italia, Vittorio Privitera
