Ultra high resolution electron beam lithography and nano-engineering workstation
In the clean room we have the e-line apparatus by Raith for electron beam lithography and electron beam assisted processing. Characteristics of the facility are:
- Schottky thermal-field emission filament
- beam diameter smaller than 2 nm at 20 kV
- acceleration voltage: 100 V – 30 kV
- working distance: 2 – 15 mm
- write field: 1 μm – 1 mm
- samples: 1 mm – 4 inches
- interferometer stage with 2 nm positioning accuracy
- minimum line width smaller than 20 nm (better than 10 nm achievable with negative resist
- overlay and stitching accuracy better than 20nm
The apparatus is also equipped with an electron beam induced deposition system (for deposition of platinum, tungsten, insulators, etc.) and with two nano-manipulators for in situ measurements.
Staff contact: Giuseppe D'Arrigo
