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The synthesis of advanced materials is traditionally one of the core-business actions at the Agrate Unit. It is devoted to the optimization and study of a variety of materials, from thin films to nanowires, to bidimensional lattices, to support the research for new functionalities in the field of emerging nanoelectronic (memory and logic) devices. The main following activities are present:


Metalorganic Chemical Vapour Deposition (MOCVD) 

4” Low pressure AIX200/4 MOCVD for chalcogenides as film, 1d and 2D nanostructures. Available precursors of Ge, Sb, Te, In, Bi, Se.
The reactor is equipped with a  4’’ rotating substrate holder; N2 is both carrier and process gas; No hydride precursors (simplification and risk reduction) Sublimator for low vapor pressure precursors‏.

 

Scope. growth of chalcogenides (thins films and nanowires) for phase change memories (In-Ge-Te, In-Sb-Te, Ge-Sb-Te, Bi-Sb-Se-Te systems), Transition Metal Dichalcogenides (MoTe2) and materials for thermoelectric applications (Bi2Te3, Bi2Se3, Sb2Te3).

Contact person: Massimo Longo


Molecular Beam Epitaxy (MBE)

Equipment: UHV mini-MBE, in situ real time RHEED monitoring, residual gas analyzer; Multiple e-beam evaporators + k-cells + atom gas plasma source; In situ XPS and LEIS: chemical/compositional characterization; In situ VT STM-STS-BEEM/AFM.

 

Scope: growth of two dimensional elementary materials (silicene, stanene) on substrates, Growth of ultra-thin oxides (e.g. Al2O3)

Contact person: Alessandro Molle


Chemical Vapor Deposition (CVD)

Tubular furnace-based CVD ; tubolar furnace with temperature up to 1100°; Ar2/N2 is both carrier and process gas; Growth and post-growth process.

It is devoted to the growth of transition metal dichalchogenides MX2 (M=Mo,W, Ti, Ta, Nb, X=S,Te), other dichalchogenides (e.g. SnS2), and van der Waals heterostructures

Contact person: Alessandro Molle


Atomic Layer Deposition (ALD)

1) Savannah 200 ALD reactor (Cambridge Nanotech Inc., on the left); 8’’ reaction chamber; cross flow reactor with N2 carrier gas; 3 metal precursor lines; H2O and O3 lines; Tdep max 300°C; In situ spectroscopic ellipsometer.

2) F120 ALD reactor (ASM Microchemistry Ltd., on the right); 4’’ reaction chamber; cross flow reactor with N2 carrier gas; possibility to load 4 metal precursors + TMA line; H2O and O3 lines; Tdep max 450°C.