On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Data di pubblicazione: 28 Set 2018

RivistaFonte dati: OPENALEXTipo OpenAlex: articleOpen Access
Autori: Luis A. Marqués, Marı́a Aboy, Iván Santos, Pedro López, Fuccio Cristiano, Antonino La Magna, Karim Huet, Toshiyuki Tabata, Lourdes Pelaz

We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {0 0 1} loops in nanosecond laser-annealed silicon. We demonstrate that at temperatures close to the melting point, self-interstitial rich silicon is driven into dense liquid-like droplets that are highly mobile within the solid crystalline matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {0 0 1} loops through a liquid-to-solid phase transition in the nanosecond timescale.

Editore
Elsevier
Fonte
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume
458
Pagine
179-183
Citazioni
4
ID archivio
ca596c88c90e5c0ec69871d7902de24b
Riferimenti
Volume: 458 Pages: 179-183