Performance analysis of a normally-off 4H-SiC trench bipolar-mode FET for power applications

Data di pubblicazione: 1 Gen 2012

LibroFonte dati: ARCHIVIO
Fonte
Proceedings of the 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
ID archivio
89099d897ed61889360ce4185c500fc2