Simulation and experimental results on the forward JV characteristic of Al implanted 4H-SiC pin diodes

Data di pubblicazione: 1 Gen 2007

RivistaFonte dati: ARCHIVIO

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Fonte
Microelectronics journal
ID archivio
ffe9e254b8f109c59d7de3e42f7c2ba0
Riferimenti
Volume: 38 Issue: 12 Pages: 1273-1279