Integration of organic based Schottky junctions for crossbar non-volatile memory applications

Data di pubblicazione: 1 Dic 2008

RivistaFonte dati: ARCHIVIO

Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylenevinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current–voltage characteristics were studied in order to investigate which of the tested compounds could possibly reach the requirements for non-volatile memory applications. All the investigated devices displayed good rectifying properties, ranging from 102 to 104. On the other hand, one of the compounds reveals higher conductivity and possible reasons for this behavior are discussed.

Editore
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDA
Fonte
Microelectronics engineering
ID archivio
25120d2777c79fc4e56f2964fd624359
Riferimenti
Volume: 85 Issue: 12 Pages: 2439-2441