Arsenic implanted specimens after liquid phase epitaxy followed by annealing treatment were studied in the range 450 C-900 C. A detailed analysis of As and interstitial profiles reveals that arsenic diffuses, starting from 550 C, in two stages: as an interstitial-arsenic complex for 550 C≤ T≤ 650 C and independently of interstitials for T≥ 750* C. It is shown that interstitials are created during the liquid to solid transformation prior to the annealing treatments.ABSTRACT