Theoretical aspects of graphene-like group IV semiconductors

Data di pubblicazione: 18 Set 2013

RivistaFonte dati: OPENALEXTipo OpenAlex: articleAccesso chiuso
Autori: Michel Houssa, Bas van den Broek, Emilio Scalise, B. Ealet, G. Pourtois, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, Marco Fanciulli, Alessandro Molle, Valery V. Afanas'ev, André L. Stesmans

Silicene and germanene are the silicon and germanium counterparts of graphene, respectively. Recent experimental works have reported the growth of silicene on (1 1 1)Ag surfaces with different atomic configurations, depending on the growth temperature and surface coverage. We first theoretically study the structural and electronic properties of silicene on (1 1 1)Ag surfaces, focusing on the (4 × 4)silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), the corrugated silicene layer, with the Ag substrate removed, is predicted to be semiconducting, with a computed energy bandgap of about 0.3 eV. However, the hybridization between the Si 3p orbitals and the Ag 5s orbital in the silicene/(1 1 1)Ag slab model leads to an overall metallic system, with a distribution of local electronic density of states, which is related to the slightly disordered structure of …

Editore
North-Holland
Fonte
Applied surface science
Volume
291
Pagine
98-103
Citazioni
26
ID archivio
0450f3f0395874387f15bbf39575214f
Riferimenti
Volume: 291 Pages: 98-103