This work describes the effect of the annealing temperature on the size and wetting of nanostructures obtained on 4H–SiC substrate by the dewetting process of a deposited nanoscale-thick Ag film. The work focuses, in particular, on the difference between solid-state dewetting (below Ag melting temperature) and liquid-state dewetting (above Ag melting temperature). Following the deposition of a 58 nm-thick Ag film on the SiC substrate, annealings were perfomed at 800 °C, 850 °C and 885 °C so to induce the Ag film solid-state dewetting. In addition, annealing at 1040 °C was performed so to induce the Ag film liquid-state dewetting. The dewetting processes led to the formation of nanostructures on the SiC surface. Plan-view and cross-view scanning electron microscopy analyses were carried out to quantify the evolution of the average planar size and of the average contact angle (to the SiC surface) of the Ag …