Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

Data di pubblicazione: 10 Mag 2022

RivistaFonte dati: OPENALEXTipo OpenAlex: articleOpen Access
Autori: Arun Kumar, Seyed Ariana Mirshokraee, Alessio Lamperti, M. Cantoni, Massimo Longo, Claudia Wiemer

Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb2Te3 shell over GeTe and Ge-rich Ge-Sb-Te core nanowires synthesized via metal-organic chemical vapor deposition (MOCVD), catalyzed by the Vapor–Liquid–Solid (VLS) mechanism. The thickness of the Sb2Te3 shell could be adjusted by controlling the growth time without altering the nanowire morphology. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were employed to examine the surface morphology and the structure of the nanowires. The study aims to investigate the interdiffusion, intactness, as well as the oxidation state of the core-shell nanowires. Angle-resolved X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface chemistry of the nanowires. No elemental interdiffusion between the GeTe, Ge-rich Ge-Sb-Te cores, and Sb2Te3 shell of the nanowires was revealed. Chemical bonding between the core and the shell was observed.

Fonte
Nanomaterials
Volume
12
Fascicolo
10
Pagine
1623
Citazioni
5
ID archivio
7b237c6a2aca157e0ed1320879d706b6
Riferimenti
Volume: 12 Issue: 10 Pages: 1623