Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors
Data di pubblicazione: 17 Mar 2006
RivistaFonte dati: ARCHIVIO
Silicon dioxide films have been deposited at temperatures below 270°C in an electron cyclotron resonance (ECR) plasma reactor from O2, SiH4, and He gas mixture. Pinhole density analysis as a function of substrate temperature for different microwave powers was carried out. Films deposited at higher microwave power and at room temperature show defect densities (10MV∕cm and charge trapping at fields >6MV∕cm have been evaluated …
