Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift

Data di pubblicazione: 23 Ott 2012

RivistaFonte dati: OPENALEXTipo OpenAlex: articleAccesso chiuso
Autori: M. De Seta, Giovanni Capellini, Michele Ortolani, Michele Virgilio, Giuseppe Grosso, Giuseppe Nicotra, P. Zaumseil

In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k⋅ p model.

Editore
IOP Publishing
Fonte
Nanotechnology
Volume
23
Fascicolo
46
Pagine
465708
Citazioni
30
ID archivio
4fe518a0652d3cd824d0381bb4b38bfb
Riferimenti
Volume: 23 Issue: 46 Pages: 465708