Si nanoclusters embedded in SiO 2 have been produced by thermal annealing in the 900–1250 C range of SiO x films or of SiO 2/Si/SiO 2 multilayers, both prepared by plasma enhanced chemical vapour deposition. The structural properties of these systems have been investigated by energy filtered transmission electron microscopy. This technique, due to its capability to detect Si nanoclusters independently of the presence of a crystalline phase, has evidenced a relevant contribution of amorphous nanostructures, not detectable by using the more conventional dark field transmission electron microscopy technique. By also taking into account this contribution, an accurate quantitative description of the evolution of the samples upon thermal annealing has been accomplished. The temperatures at which the formation of amorphous and crystalline Si nanoclusters starts have been determined. Furthermore, the …