Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height …

Data di pubblicazione: 1 Gen 2005

RivistaFonte dati: ARCHIVIO
Editore
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Fonte
Materials Science Forum
ID archivio
3405ebed3c24e4d77b1a9ee155cb81b5
Riferimenti
Volume: 483485 Pages: 737-740