In this paper, we report on the observation of stimulated Raman scattering in amorphous silicon nanocrystals embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs). In particular, we have experimentally demonstrated amplification of Stokes signal up to 0.9dB∕cm at 1540.6nm using a 1427nm continuous-wavelength pump laser, consistent with a preliminary valuation of approximately a fourfold enhancement of the gain coefficient in Raman amplifier based on SRN/Si-SLs with respect to silicon. Finally, a significant reduction in threshold power of about 40% is also reported. Our findings indicate that silicon nanocrystals embedded in Si nitride-based superlattice structures show great promise for Si-based Raman lasers.