Strain Measurements in Porous Silicon by Raman Scattering

Data di pubblicazione: 1 Gen 2008

LibroFonte dati: OPENALEXTipo OpenAlex: conference-paperAccesso chiuso
Autori: Maria Antonietta Ferrara, Luigi Sirleto, Gabriele Messina, M. G. Donato, Lucia Rotiroti, Ivo Rendina

Strains produce a modification of the vibration properties of materials, which can be observed by Raman scattering: a compressive stress results in an increase of the Raman frequency shift, while tensile stress results in a decrease. On this line of arguments, in this work, we investigate adsorption strains in porous silicon by Raman spectroscopy.The adsorption of chemical species induces a compressive strain in the porous silicon due to the action of the molecular forces, as a consequences a reversible blue-shift of the Raman spectra of the sample has been observed.

Fonte
Sensors And Microsystems
Pagine
142-146
Citazioni
0
ID archivio
0de2741c59bb9bb769df1a3d498680b7
Riferimenti
Pages: 142-146