Ge nanostructures for harvesting and detection of light.

Data di pubblicazione: 1 Gen 2009

Fonte dati: ARCHIVIO

Germanium (Ge) played a role of primary importance since the very beginning of the solid state electronics age. The first transistor, invented at Bell Laboratories in 1947 by William Shockley, John Bardeen and Walter Brattain, was made with a Ge crystal [1]. On the other hand, the subsequent fast and huge development of microelectronics and integrated circuits was based on silicon (Si). The reasons why Si dominates the microelectronics industry are mostly related to its abundance, low cost and excellent properties of its oxide, the SiO2. ...

ID archivio
99f553f27b9a5db89d330ad600e82452