- Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La 2 O 3 films upon annealing
2008-12-31
Riferimenti: Volume: 85 Issue: 12 Pages: 2411-2413
Fonte: Microelectronic Engineering
- Catalytic role of adsorbates in the photoluminescence emission of Si nanocrystals
2008-12-30
Riferimenti: Volume: 78 Issue: 24 Pages: 245425
Fonte: Physical Review B
- Thermal evolution and mechanical properties of hard Ti–Cr–B–N and Ti–Al–Si–B–N coatings
2008-12-25
Riferimenti: Volume: 203 Issue: 5-7 Pages: 736-740
Fonte: Surface and Coatings Technology
- Electronic Transport Properties of Ensembles of Perylene‐Substituted Poly‐isocyanopeptide Arrays
2008-12-22
Riferimenti: Volume: 18 Issue: 24 Pages: 3947-3955
Fonte: Advanced functional materials
- LASERS, OPTICS, AND OPTOELECTRONICS
2008-12-22
Riferimenti: Volume: 93 Issue: 25
Fonte: Appl. Phys. Lett
- Enhanced stimulated Raman scattering in silicon nanocrystals embedded in silicon-rich nitride/silicon superlattice structures
2008-12-22
Riferimenti: Volume: 93 Issue: 25 Pages: 251104
Fonte: Applied Physics Letters
- An experiment on the particle–wave nature of electrons
2008-12-22
Riferimenti: Volume: 30 Issue: 1 Pages: 217
Fonte: European Journal of Physics
- Protein conformational changes revealed by optical spectroscopic reflectometry in porous silicon multilayers
2008-12-15
Riferimenti: Volume: 21 Issue: 3 Pages: 035115
Fonte: Journal of Physics Condensed Matter
- “Hump” characteristics and edge effects in polysilicon thin film transistors
2008-12-15
Riferimenti: Volume: 104 Issue: 12 Pages: 124511
Fonte: Journal of Applied Physics
- Evidence of dangling bond electrical activity at the Ge/oxide interface
2008-12-15
Riferimenti: Volume: 93 Issue: 24 Pages: 242105
Fonte: Applied Physics Letters
- Morphological and compositional effects of FIB nanopatterning of multilayer metal/semiconducting devices
2008-12-14
Riferimenti: Volume: 41 Issue: 4 Pages: 734-738
Fonte: Physica E Low-dimensional Systems and Nanostructures
- Ultrafast electron− hole dynamics in core/shell CdSe/CdS dot/rod nanocrystals
2008-12-10
Riferimenti: Volume: 8 Issue: 12 Pages: 4582-4587
Fonte: Nano letters
- Pt-and Pd-nanoclusters functionalized carbon nanotubes networked films for sub-ppm gas sensors
2008-12-10
Riferimenti: Volume: 135 Issue: 1 Pages: 289-297
Fonte: sensors and Actuators B: Chemical
- Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
Maria Grazia Grimaldi, Daniele D’Angelo, Lucia Romano, I. Crupi, Egidio Carria,
Vittorio Privitera, M. G. Grimaldi
2008-12-08
Riferimenti: Volume: 93 Issue: 23 Pages: 231901
Fonte: Applied Physics Letters
- Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy
2008-12-08
Riferimenti: Volume: 9 Issue: 1 Pages: 23-29
Fonte: Nano letters
- Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects
Elena Bruno, Salvo Mirabella
2008-12-05
Riferimenti: Volume: 154 Pages: 247-251
Fonte: Materials Science and Engineering: B
- B electrical activation in crystalline and preamorphized Ge
2008-12-05
Riferimenti: Volume: 154 Pages: 56-59
Fonte: Materials Science and Engineering: B
- Atomistic modeling of FnVm complexes in pre-amorphized Si
Salvo Mirabella
2008-12-05
Riferimenti: Volume: 154 Pages: 207-210
Fonte: Materials Science and Engineering: B
- Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon
2008-12-05
Riferimenti: Volume: 154 Pages: 240-246
Fonte: Materials Science and Engineering: B
- Vacancy engineering by He induced nanovoids in crystalline Si
Elena Bruno, Salvo Mirabella
2008-12-05
Riferimenti: Volume: 24 Issue: 1 Pages: 015005
Fonte: Semiconductor Science and Technology
