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Design, fabrication and characterization of silicon carbide devices for power electronics.
Study of the effect of post-implantation thermal annealing on the electrical activation of SiC layers, through four point probe Hall-effect measurements.


Virginia Boldrini graduated in Physics from University of Ferrara in 2014, with thesis about the fabrication of a gas sensor based on porous silicon substrate. Then she obtained a PhD in Physics from University of Padova, with thesis on the development and analysis of innovative doping processes for high purity germanium. During her PhD, Virginia was author and coauthor of five papers on academic journals and gave four oral presentations at international conferences. At present, she is a post-doc researcher at CNR-IMM, where she works on silicon carbide for power electronics. She is skilled in the fabrication of doped semiconductor layers, through conventional and non-conventional doping techniques, and in their characterization by several methods, particularly Hall-effect measurements.

Curriculum (PDF): 

Scientific Productions

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Marco Gorni, Mariaconcetta Canino, Giulio Pizzochero, Massimo Camarda, Judith Woerle, Ulrike Grossner

Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 698-704

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Mariaconcetta Canino, Michele Sanmartin, Giovanni Alfieri

3× 1018-1× 1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 683-688

Virginia Boldrini, Gianluigi Maggioni, Sara Carturan, Walter Raniero, Francesco Sgarbossa, Ruggero Milazzo, Daniel Ricardo Napoli, Enrico Napolitani, R Camattari, D De Salvador

Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 52 Issue: 3 Pages: 035104

Gianluigi Maggioni, Francesco Sgarbossa, Enrico Napolitani, Walter Raniero, Virginia Boldrini, Sara Maria Carturan, Daniel Ricardo Napoli, Davide De Salvador

Diffusion doping of germanium by sputtered antimony sources

Materials Science in Semiconductor Processing [Pergamon], Volume: 75 Pages: 118-123

G Maggioni, S Carturan, W Raniero, S Riccetto, F Sgarbossa, V Boldrini, R Milazzo, DR Napoli, D Scarpa, A Andrighetto, E Napolitani, D De Salvador

Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

The European Physical Journal A [Springer Berlin Heidelberg], Volume: 54 Issue: 3 Pages: 34

Virginia Boldrini, Sara Maria Carturan, Gianluigi Maggioni, Enrico Napolitani, Daniel Ricardo Napoli, Riccardo Camattari, Davide De Salvador

Optimal process parameters for phosphorus spin-on-doping of germanium

Applied Surface Science [North-Holland], Volume: 392 Pages: 1173-1180

DR Napoli, G Maggioni, P Cocconi, R Gunnella, E Napolitani, M Loriggiola, J Eberth, D Rosso, V Boldrini, M Gelain, MG Grimaldi, G Della Mea, G Mariotto, S Carturan, F Sgarbossa, W Raniero, SJ Rezvani, S Tati, D De Salvador, S Riccetto, N Pinto


Acta Phys. Polon. [], Volume: 48 Pages: 387