Scientific Productions
New method for the production of thin and stable, segmented n + contacts in HPGe detectors
The European Physical Journal A [Springer Berlin Heidelberg], Volume: 57 Issue: 6 Pages: 1-10
A critical evaluation of Ag-and Ti-hyperdoped Si for Si-based infrared light detection
Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 6 Pages: 065701
Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0. 91Sn0. 09
Materials Science in Semiconductor Processing [Pergamon], Volume: 121 Pages: 105399
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
New Journal of Physics [IOP Publishing], Volume: 22 Issue: 12 Pages: 123036
Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response
Physical Review Applied [American Physical Society], Volume: 14 Issue: 6 Pages: 064051
Applied Surface Science [North-Holland], Pages: 148532
Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 7 Pages: 075028
N-type doping of Ge by P spin on dopant and pulsed laser melting
Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 6 Pages: 065002
p-type doping of Ge by Al ion implantation and pulsed laser melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145230
N-Type Heavy Doping with Ultralow Resistivity in Ge by Sb Deposition and Pulsed Laser Melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145229
p-type doping of Ge by Al ion implantation and pulsed laser melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145230
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145277
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145229
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Physical Review B Phys Rev B [American Physical Society], Volume: 101 Pages: 174430
Self-limiting Sb monolayer as a diffusion source for Ge doping
Applied Surface Science [North-Holland], Volume: 496 Pages: 143713
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Physica Status Solidi (A) [], Volume: 216 Pages: 1900307
Indiffusion of oxygen in germanium induced by pulsed laser melting
Materials Science in Semiconductor Processing [Pergamon], Volume: 88 Pages: 93-96
Monolayer doping of germanium by phosphorus containing molecules
Nanotechnology [IOP Publishing], Volume: 29 Issue: 46 Pages: 465702
ACS applied materials & interfaces [American Chemical Society], Volume: 10 Issue: 40 Pages: 34781-34791
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Nano letters [American Chemical Society], Volume: 18 Issue: 8 Pages: 4777-4784
Journal of Applied Physics [AIP Publishing LLC], Volume: 123 Issue: 16 Pages: 161524
Journal of Applied Physics [AIP Publishing LLC], Volume: 123 Issue: 16 Pages: 165101
Radiotherapy and Oncology [Elsevier], Volume: 127 Pages: S310-S311
Radiotherapy and Oncology [Elsevier], Volume: 127 Pages: S310-S311
Radiotherapy and Oncology [Elsevier], Volume: 127 Pages: S310-S311
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Chemistry of Materials [], Volume: 30 Pages: 6801-6809
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Chemistry of Materials [], Volume: 30 Pages: 6801-6809
In-situ ohmic contact formation for n-type Ge via non-equilibrium processing
Semiconductor Science and Technology [IOP Publishing], Volume: 32 Issue: 11 Pages: 115006
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 5 Pages: 051203
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 50 Issue: 36 Pages: 363001
Materials Science in Semiconductor Processing [Pergamon], Volume: 62 Pages: 205-208
Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers
ACS omega [American Chemical Society], Volume: 2 Issue: 5 Pages: 1750-1759
Materials Science in Semiconductor Processing [Pergamon], Volume: 62 Pages: 205-208
Electronic Band Structure of undoped and P-doped Si Nanocrystals embedded in SiO 2
Journal of Materials Chemistry C [Royal Society of Chemistry],
14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, GFP 2017
Integration [], Volume: 9 Pages: 10
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
Materials Science in Semiconductor Processing [Pergamon],
Physical Review B [American Physical Society], Volume: 94 Issue: 8 Pages: 085202
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 34 Issue: 3 Pages: 03H110
Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si
Journal of Applied Physics [AIP Publishing LLC], Volume: 119 Issue: 11 Pages: 115103
Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films
arXiv preprint arXiv:1601.05321 [],
Underground nuclear astrophysics: Why and how
arXiv preprint arXiv:1601.00188 [],
Materials Science in Semiconductor Processing [], Issue: 42 Pages: 165
Chapter Three-Ion Implantation Defects and Shallow Junctions in Si and Ge
Semiconductors and Semimetals [Elsevier], Volume: 91 Pages: 93-122
Applied Surface Science [North-Holland], Volume: 357 Pages: 1031-1039
Comment on “Diffusion of n-type dopants in germanium”[Appl. Phys. Rev. 1, 011301 (2014)]
Applied Physics Reviews [AIP Publishing LLC], Volume: 2 Issue: 3 Pages: 036101
Resonance strengths in the 17, 18O (p, α) 14, 15N reactions and background suppression underground
The European Physical Journal A [Springer Berlin Heidelberg], Volume: 51 Issue: 8 Pages: 94
Resonance strengths in the 17, 18 O (p, α) 14, 15 N reactions and background suppression underground
The European Physical Journal A [Springer Berlin Heidelberg], Volume: 51 Issue: 8 Pages: 1-12
C ion-implanted TiO2 thin film for photocatalytic applications
Journal of Applied Physics [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 105308
Effects of helium ion bombardment on metallic gold and iridium thin films
Optical Materials Express [Optical Society of America], Volume: 5 Issue: 1 Pages: 176-187
Effects of atmospheric pressure plasma JET treatment on aluminium alloys
Surface engineering [Taylor & Francis], Volume: 30 Issue: 9 Pages: 636-642
Physical Review C [American Physical Society], Volume: 90 Issue: 1 Pages: 019902
Influence of atmospheric pressure plasma treatments on the corrosion resistance of stainless steels
METALLURGIA ITALIANA [ASSOC ITALIANA METALLURGIA], Issue: 7-8 Pages: 35-40
Journal of Raman Spectroscopy [], Volume: 45 Issue: 2 Pages: 197-201
Coulomb excitation of neutron-rich Cd isotopes
Physical Review C [American Physical Society], Volume: 89 Issue: 1 Pages: 014313
Underground study of the O 17 (p, γ) F 18 reaction relevant for explosive hydrogen burning
Physical Review C [American Physical Society], Volume: 89 Issue: 1 Pages: 015803
Role of ion mass on damage accumulation during ion implantation in Ge
physica status solidi (a) [], Volume: 211 Issue: 1 Pages: 118-121
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Physical Review C Phys Rev C [American Physical Society], Volume: 89 Pages: 015803
Influence of atmospheric pressure plasma treatments on the corrosion resistance of stainless steels
La Metallurgia Italiana [],
Defect complexes in fluorine-implanted germanium
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 50 Pages: 505310
Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy
Thin Solid Films [Elsevier], Volume: 541 Pages: 76-78
Extended point defects in crystalline materials: Ge and Si
Physical review letters [American Physical Society], Volume: 110 Issue: 15 Pages: 155501
ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 5 Pages: 89-103
SURFACE AND INTERFACE ANALYSIS [John Wiley & Sons Ltd.], Pages: 1-600
Preface for Proceedings of SIMS XVIII, Riva del Garda, Italy, 2011
Surface and Interface Analysis [], Volume: 45 Issue: 1 Pages: 1-2
APPLIED PHYSICS REVIEWS—FOCUSED REVIEW
JOURNAL OF APPLIED PHYSICS [], Volume: 113 Pages: 031101
Physical review letters [American Physical Society], Volume: 109 Issue: 20 Pages: 202501
Advanced characterization of carrier profiles in germanium using micro-machined contact probes
AIP Conference Proceedings [American Institute of Physics], Volume: 1496 Issue: 1 Pages: 167-170
Materials Chemistry and Physics [Elsevier], Volume: 136 Issue: 2-3 Pages: 1073-1080
The European Physical Journal A [Springer Berlin Heidelberg], Volume: 48 Issue: 10 Pages: 144
The European Physical Journal A [Springer Berlin Heidelberg], Volume: 48 Issue: 10 Pages: 1-6
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 10 Pages: 103113
Role of self-interstitials on B diffusion in Ge
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 282 Pages: 8-11
Fluorine in Ge: Segregation and EOR-defects stabilization
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 282 Pages: 21-24
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications
Meeting Abstracts [The Electrochemical Society], Issue: 32 Pages: 2631-2631
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
European Physical Journal A [], Volume: 48 Pages: 144
J. Appl. Phys [], Volume: 73706 Issue: 10.1063/1.4757406 Pages: 112
Effect of O Implantation in Crystalline Ge
ECS Meeting Abstracts [IOP Publishing], Issue: 32 Pages: 2146
Self-interstitials injection in crystalline Ge induced by GeO 2 nanoclusters
Physical Review B [American Physical Society], Volume: 84 Issue: 2 Pages: 024104
Fluorine effect on As diffusion in Ge
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 11 Pages: 113527
Erbium–oxygen interactions in crystalline silicon
Semiconductor science and technology [IOP Publishing], Volume: 26 Issue: 5 Pages: 055002
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Physical Review B [], Volume: 83 Pages: 060409
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si
Physical Review B [American Physical Society], Volume: 82 Issue: 15 Pages: 155323
Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy
ECS Transactions [IOP Publishing], Volume: 33 Issue: 11 Pages: 157
Recent Insights in the Diffusion of Boron in Silicon and Germanium
ECS Transactions [IOP Publishing], Volume: 33 Issue: 11 Pages: 167
(Invited) Recent Insights in the Diffusion of Boron in Silicon and Germanium
ECS Transactions [The Electrochemical Society], Volume: 33 Issue: 11 Pages: 167-178
Recent Insights in the Diffusion of B in Silicon and Germanium
ECS Meeting Abstracts [IOP Publishing], Issue: 23 Pages: 1569
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 20 Pages: 201906
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
Thin solid films [Elsevier], Volume: 518 Issue: 9 Pages: 2326-2329
Radiation enhanced diffusion of B in crystalline Ge
Thin Solid Films [Elsevier], Volume: 518 Issue: 9 Pages: 2386-2389
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 3 Pages: 034309
Boron diffusion in extrinsically doped crystalline silicon
Physical Review B [American Physical Society], Volume: 81 Issue: 4 Pages: 045209
Publications Repository-Helmholtz-Zentrum Dresden-Rossendorf
Applied Physics Letters [], Volume: 97 Pages: 163117
Formation and incorporation of SiF 4 molecules in F-implanted preamorphized Si
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 10 Pages: 101908
Mechanism of B diffusion in crystalline Ge under proton irradiation
Physical Review B [American Physical Society], Volume: 80 Issue: 3 Pages: 033204
Ga-implantation in Ge: Electrical activation and clustering
Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 1 Pages: 013518
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 240-246
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 247-251
Atomistic modeling of F n V m complexes in pre-amorphized Si
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 207-210
Detailed arsenic concentration profiles at Si/SiO 2 interfaces
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 4 Pages: 043507
Detailed arsenic concentration profiles at Si/SiO {sub 2} interfaces
Journal of Applied Physics [], Volume: 104 Issue: 4
Formation and evolution of F nanobubbles in amorphous and crystalline Si
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 6 Pages: 061906
Mechanism of boron diffusion in amorphous silicon
Physical review letters [American Physical Society], Volume: 100 Issue: 15 Pages: 155901
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 20 Issue: 17 Pages: 175215
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 26 Issue: 1 Pages: 382-385
He implantation to control B diffusion in crystalline and preamorphized Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 26 Issue: 1 Pages: 386-390
B Clustering in Amorphous Silicon
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B [], Volume: 26 Pages: 382-385
Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1070
Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1070
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 3 Pages: 031905
Substitutional B in Si: Accurate lattice parameter determination
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 9 Pages: 093523
Iso-concentration study of atomistic mechanism of B diffusion in Si
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 165-168
He induced nanovoids for point-defect engineering in B-implanted crystalline Si
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 2 Pages: 023515
Atomistic mechanism of boron diffusion in silicon
Physical review letters [American Physical Society], Volume: 97 Issue: 25 Pages: 255902
Carrier mobility and strain effect in heavily doped p-type Si
Materials Science and Engineering: B [Elsevier], Volume: 135 Issue: 3 Pages: 220-223
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 24 Pages: 241901
Lattice strain of B–B pairs formed by He irradiation in crystalline Si 1− x B x/Si
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 55-58
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 46-49
Point defect engineering in preamorphized silicon enriched with fluorine
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 94-99
Evidences of F-induced nanobubbles as sink for self-interstitials in Si
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 17 Pages: 171916
Effect of strain on the carrier mobility in heavily doped p-type Si
Physical review letters [American Physical Society], Volume: 97 Issue: 13 Pages: 136605
Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion
Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 10 Pages: 103510
Lattice strain induced by boron clusters in crystalline silicon
Semiconductor science and technology [IOP Publishing], Volume: 21 Issue: 6 Pages: L41
Fluorine incorporation in preamorphized silicon
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 433-436
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 394-398
Si-based materials for advanced microelectronic devices: Synthesis, defects and diffusion
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [Elsevier Science Publishing Company, Inc.], Volume: 253 Issue: 1-2
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 433-436
Atomistic mechanism of B diffusion in Si
PHYSICAL REVIEW LETTERS [], Volume: 97 Pages: 255902
Room Temperature Boron Diffusion in Amorphous Silicon
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS [Warrendale, Pa.; Materials Research Society; 1999], Volume: 912 Pages: 53
Physical Review Letters [[Woodbury, NY, etc.] American Physical Society.], Volume: 97 Issue: 13 Pages: 136605-136800
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 394-398
Fluorine incorporation during Si solid phase epitaxy
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 242 Issue: 1-2 Pages: 614-616
E. Napolitani, and D. De Salvador
Phys. Rev. Lett [], Volume: 97 Pages: 136605
Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping
J. Vac. Sci. Technol. B [], Volume: 24 Pages: 381
Submicron confinement effect on electrical activation of B implanted in Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 257-260
Dissolution kinetics of B clusters in crystalline Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 32-38
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 22 Pages: 221902
Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
Journal of applied physics [American Institute of Physics], Volume: 98 Issue: 7 Pages: 073521
B activation enhancement in submicron confined implants in Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 13 Pages: 133110
Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion
Physical Review B [American Physical Society], Volume: 72 Issue: 4 Pages: 045219
Interaction between implanted fluorine atoms and point defects in preamorphized silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 230 Issue: 1-4 Pages: 220-224
Fluorine segregation and incorporation during solid-phase epitaxy of Si
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 12 Pages: 121905
Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
JOURNAL OF APPLIED PHYSICS [], Volume: 98 Pages: 073521
Experimental evidences for two paths in the dissolution process of B clusters in crystalline silicon
APPLIED PHYSICS LETTERS [], Volume: 87 Pages: 221902-1-3
Ge-on-Si based mid-infrared plasmonics
Silicon Photonics XVI [International Society for Optics and Photonics], Volume: 11691 Pages: 116910M
2017 IEEE 14th International Conference on Group IV Photonics (GFP) [IEEE], Pages: 9-10
Qualification tests of optical coatings in space environment
2017 IEEE International Workshop on Metrology for AeroSpace (MetroAeroSpace) [IEEE], Pages: 228-233
Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) [IEEE], Pages: 27-30
Optical components in harsh space environment
Planetary Defense and Space Environment Applications [International Society for Optics and Photonics], Volume: 9981 Pages: 99810G
Hydrogen plasma modification of shallow implanted Germanium layers
2016 International Conference on Nanomaterials: Application & Properties (NAP) [IEEE], Pages: 01PISERE02-1-01PISERE02-4
CECAM Workshop on Computational Plasmonics [],
Solar Physics and Space Weather Instrumentation VI [International Society for Optics and Photonics], Volume: 9604 Pages: 960407
Resolving the plasmon decay mechanisms in heavily doped semiconductors
Plasmonica 2015 [],
He+ ions damage on optical coatings for solar missions
EUV and X-ray Optics: Synergy between Laboratory and Space IV [International Society for Optics and Photonics], Volume: 9510 Pages: 95100B
Damage of EUV optical coatings induced by alpha-particles bombardment
Advances in X-Ray/EUV Optics and Components IX [International Society for Optics and Photonics], Volume: 9207 Pages: 920715
Zirconium phosphate functionalization of nanostructured TiO2 films: a SIMS study
SIMS Europe 2014–IX European Workshop on Secondary Ion Mass Spectrometry [],
On the strain induced by arsenic into silicon
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) [IEEE], Pages: 206-209
18th International Conference on Secondary Ion Mass Spectrometry-SIMS XVIII [John Wiley and Sons], Volume: 45
Effect of He Induced Nanovoid on B Implanted in Si: The Microscopic Mechanism
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 105-110
Study of B clustering thermal behaviour by means of in situ High Resolution X-Ray Diffraction
European Materials Research Society Spring Meeting 2006 [E-MRS], Pages: U III-3-U III-3
Laser Annealing Processes in Semiconductor Technology [Woodhead Publishing], Pages: 175-250
Ion implantation defects and shallow junctions in Si and Ge
Semiconductors and Semimetals [Elsevier], Volume: 91 Pages: 93-122