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eneral-features-of-progressive-breakdown-in-gate-oxides-a-compact-model/2020-12-10T21:14:58+00:00https://www.imm.cnr.it/pubblicazioni/3749-array-of-mutually-insulated-geiger-mode-avalanche-photodiodes-and-corresponding/2020-12-10T21:14:57+00:00https://www.imm.cnr.it/pubblicazioni/3750-threshold-voltage-variability-of-nrom-memories-after-exposure-to-ionizing/2026-10-05T23:15:55+00:00https://www.imm.cnr.it/pubblicazioni/3751-silicon-photomultipliers-dark-current-and-its-statistical-spread/2020-12-13T23:18:50+00:00https://www.imm.cnr.it/pubblicazioni/3752-capacitance-study-of-thin-film-sno2-f-p-type-a-si-h-heterojunctions/2020-12-10T21:14:57+00:00https://www.imm.cnr.it/pubblicazioni/3753-multiple-gate-nvm-cells-with-improved-fowler-nordheim-tunneling-program-and/2020-12-10T21:14:59+00:00https://www.imm.cnr.it/pubblicazioni/3754-preliminary-radiation-hardness-tests-of-single-photon-si-detectors/2026-10-05T23:15:55+00:00https://www.imm.cnr.it/pubblicazioni/3755-the-dielectric-breakdown-in-gate-oxides-under-high-field-stress/2020-12-10T21:14:57+00:00https://www.imm.cnr.it/pubblicazioni/3756-from-atomistic-to-device-level-investigation-of-hybrid-redox-molecular-silicon/2026-10-05T23:15:55+00:00https://www.imm.cnr.it/pubblicazioni/3757-performance-and-reliability-of-si-nanocrystal-double-layer-memory-devices-with/2020-12-11T23:31:48+00:00https://www.imm.cnr.it/pubblicazioni/3758-integration-of-silicon-nanocrystal-memory-arrays-with-hfalox-based-interpoly/2020-12-11T23:31:47+00:00https://www.imm.cnr.it/pubblicazioni/3759-highly-manufacturable-low-aspect-ratio-si-nano-floating-gate-finfet-memories/2020-12-11T23:31:46+00:00https://www.imm.cnr.it/pubblicazioni/3760-glucose-oxidase-characterization-for-the-fabrication-of-hybrid-microelectronic/2026-10-05T23:15:55+00:00https://www.imm.cnr.it/pubblicazioni/3761-evaluation-of-the-degradation-of-floating-gate-memories-with-al2o3-tunnel-oxide/2021-01-11T15:00:32+00:00https://www.imm.cnr.it/pubblicazioni/3762-accurate-assessment-of-the-time-to-failure-of-hyper-thin-gate-oxides-subjected/2020-12-10T21:14:57+00:00https://www.imm.cnr.it/pubblicazioni/3763-test-of-scintillator-readout-with-single-photon-avalanche-photodiodes/2023-07-18T12:57:08+00:00https://www.imm.cnr.it/pubblicazioni/3764-non-volatile-memories-with-discrete-storage-nodes/2018-03-31T22:36:20+00:00https://www.imm.cnr.it/pubblicazioni/3765-silicon-planar-technology-for-single-photon-optical-detectors/2020-12-10T21:14:57+00:00https://www.imm.cnr.it/pubblicazioni/3766-structural-analysis-of-breakdown-in-ultrathin-gate-dielectrics-using/2020-12-10T21:14:58+00:00https://www.imm.cnr.it/pubblicazioni/3767-reliability-of-mos-devices-with-tungsten-gates/2020-12-10T21:14:58+00:00https://www.imm.cnr.it/pubblicazioni/3768-statistical-analysis-of-nanocrystal-memory-reliability/2020-12-10T21:14:59+00:00https://www.imm.cnr.it/pubblicazioni/3769-preliminary-test-measurements-of-the-spad-array/2020-12-10T21:14:59+00:00https://www.imm.cnr.it/pubblicazioni/3770-manufacturing-process-of-a-germanium-implanted-hbt-bipolar-transistor/2020-12-10T21:14:59+00:00https://www.imm.cnr.it/pubblicazioni/3771-on-the-occurrence-of-few-electrons-phenomena-in-ultra-scaled-silicon-nano/2020-12-10T21:14:58+00:00https://www.imm.cnr.it/pubblicazioni/3772-nanocrystal-mos-memories-obtained-by-lpcvd-deposition-of-si-nanograins/2020-12-14T23:08:54+00:00https://www.imm.cnr.it/pubblicazioni/3773-role-of-h2-in-low-temperature-post-oxidation-anneal-for-gate-oxide-on-6h-sic/2020-12-10T21:14:57+00:00https://www.imm.cnr.it/pubblicazioni/3774-erbium-doping-of-crystalline-and-amorphous-silicon-for-optoelectronic/2021-03-08T13:08:38+00:00https://www.imm.cnr.it/pubblicazioni/3776-temperature-and-field-effects-on-the-conduction-mechanisms-in-semi-insulating/2020-12-10T21:14:59+00:00https://www.imm.cnr.it/pubblicazioni/3777-improvement-of-solar-cell-performance-and-reversibility-of-ageing-effects-in/2022-03-15T14:00:55+00:00https://www.imm.cnr.it/pubblicazioni/3778-laser-annealing-in-si-and-ge-anomalous-physical-aspects-and-modeling-approaches/2020-12-12T23:27:51+00:00https://www.imm.cnr.it/pubblicazioni/3779-influence-of-gate-oxides-with-high-thermal-conductivity-on-the-failure/2020-12-22T03:00:40+00:00https://www.imm.cnr.it/pubblicazioni/3780-plasmonic-modes-in-molybdenum-ultra-thin-films-suitable-for-hydrogenated/2020-12-12T23:27:52+00:00https://www.imm.cnr.it/pubblicazioni/3781-thin-refractory-metal-layer-used-as-contact-barrier-to-improve-the-performance/2017-05-15T11:13:05+00:00https://www.imm.cnr.it/pubblicazioni/3782-statistical-analysis-of-dark-current-in-silicon-photomultipliers/2020-12-17T11:04:30+00:00https://www.imm.cnr.it/pubblicazioni/3783-compact-instrumentation-for-radiation-tolerance-test-of-flash-memories-in-space/2026-10-05T23:15:55+00:00https://www.imm.cnr.it/pubblicazioni/3784-radiation-effects-on-programmed-nrom-cells/2026-10-05T23:15:55+00:00https://www.imm.cnr.it/pubblicazioni/3785-in-depth-analysis-of-channel-length-fin-width-down-to-10-nm-imp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