Nanoelectronics Based on Silicene

Data di pubblicazione: 29 Apr 2015

RivistaFonte dati: ARCHIVIO

[Invited] Nanoelectronics Based on Silicene In the past decade, two-dimensional (2D) materials have evolved into a big family with emerging new members beyond graphene, such as hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and elemental monolayers (e.g. silicene, phosphorene). Silicene, the group IV elemental cousin of graphene, has a buckled honeycomb lattice1 with predicted Dirac band structure2, 3. It has the potential to be a widely tuneable 2D monolayer, where external fields and surface interactions can influence fundamental properties like the band gap4, for future innovative nanoelectronics5. For instance, several interesting phenomena in silicene has been predicted such as quantum spin Hall effect3, piezo-magnetism6 and strain-related thermal conductivity7. Despite the aforementioned exciting theoretical studies and the developing epitaxial synthesis of …

Editore
IOP Publishing
Fonte
ECS Meeting Abstracts
ID archivio
40fcd166adc6adb663d8558772297eed
Riferimenti
Issue: 9 Pages: 854