Index
Data di pubblicazione: 1 Gen 2003
RivistaFonte dati: ARCHIVIO
C complex 15 CaF2/Si system 50, 54, 125 CAIBE (chemical assisted ion beam etching) 245 capillary stress 85 Car–Parrinello method 46 cavity quality factor 235, 251 CI (configuration interaction) 39 CIE (commission internationale de l'eclairage) 7 cladding layer 21 CMOS (complementary metal oxide semiconductor) 1, 11, 30, 114, 131, 133, 172, 227, 263, 265 co-implantation 182, 184, 187, 190, 191 conduction band 3, 5, 17, 20, 25, 26, 38, 40, 43, 51, 54, 56, 60, 69, 199 conduction band device 22 conduction band minimum 3, 4, 47, 50, 52, 59, 91, 135 …