Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

Hong-Yu Chen; Stefano Brivio; Che‐Chia Chang; Jacopo Frascaroli; Tuo‐Hung Hou; Boris Hudec; Ming Liu; Hangbing Lv; G. Molas; Joon Sohn; Sabina Spiga; Mani Teja Vijjapu; Elisa Vianello; H.‐S. Philip Wong

doi:10.1007/s10832-017-0095-9

RivistaFonte dati: OPENALEXTipo OpenAlex: articleOpen Access

Autori: Hong-Yu Chen, Stefano Brivio, Che‐Chia Chang, Jacopo Frascaroli, Tuo‐Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, G. Molas, Joon Sohn, Sabina Spiga, Mani Teja Vijjapu, Elisa Vianello, H.‐S. Philip Wong

Fonte

Journal of Electroceramics

Volume

Fascicolo

1-4

Pagine

21-38

Citazioni

105

ID archivio

7d527b3988579bb433e33177ed7c2a90

Riferimenti

Volume: 39 Issue: 1 Pages: 21-38

Apri pubblicazione Open Access

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Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

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