Making adjustable two-dimensional (2D) materials is an emerging route to reach a superior control of new functional properties. With this aim in mind, here I will give consideration to three distinct cases. First is the case of silicene, silicene derivatives, and their device applications [1]. General details on how to produce epitaxial silicene and the path for silicene transistors will be exposed. In parallel, emerging routes for silicene processing will be also discussed. Close to silicene is the second case of the general class of Xenes, namely 2D monoelemental lattice beyond graphene [2], including germanene, stanene, borophene, epitaxial phosphorene, and recently synthesized antimonene and tellurene. Buckling in Xenes can be taken as a leverage to tune the electronic and quantum properties making it possible for Xenes to appear as semiconductors, semimetals, metals topological and trivial insulators. Not only the wealth of electronic states in the Xenes makes them suitable as nanotechnology platform, but also topological transitions among some of these electronic states are predicted to take place as a function of an external solicitation (eg vertical electric field, applied stress) thus paving the way to the full exploitation of topological features in devices at the 2D level. I will show the route and challenges for Xenes to be integrated in nanoelectronic devices by briefly describing a universal approach to Xene processing and eventually the concept of a topological field effect transistor. The third case is about the anisotropy design at the 2D level is the chemical vapour deposition of MoS2 nanosheets on patterned substrates. The highly conformal …