New emerging research materials in the technology generation are currently laying the foundation for a post-Si era of complementary metal-oxide-semiconductor (C-MOS) devices [1]. Among them, alternative semiconductors with higher carrier mobility (high-μ) such as III-V compounds and Ge are taken into account as active channels along with non-conventional device architecture and concepts [2, 3]. Not only the More Moore approach according to which “smaller is better” will be the unique guideline for engineering new device features [4], but also limiting power consumption is going to pose severe constraints for materials selection [5]. From a purely device scaling approach, a key-criterion is to preserve the drive current:() Eq.(1)(where ID, sat is the drive current at saturation, Vg the gate bias, Cox, the gate oxide capacitance and Vt the threshold voltage) against miniaturization by making use of proper …