Abstract Here, two novel approaches for disassembling epitaxial silicene from the native substrate and transferring onto arbitrary target substrates are presented. From the processing perspective, the two methodologies open up a new route for handling silicene, and in general any epitaxial Xene, in view of establishing reliable process flows for the development of a Xene‐based nanotechnology. Integration of silicene in a back‐gated controlled device architecture is demonstrated and the built up of unique multi‐stack heterostructures between silicene, but potentially every Xene, and other technological relevant materials, like transparent conductive oxides and transition metal dichalcogenides is shown.