The unique properties of superconductors such as radiation hardness and high microwave performances [1-3] make the integration with semiconductor conventional electronics a stimulating challenge. Many attempts have been tried to obtain good quality YBa2Cu3O7-x (YBCO) films on Si substrates, with the aim of taking advantage from the properties of both materials, but interdiffusion reactions and a poor lattice and thermal expansion coefficient matching require the use of a buffer layer at the semiconductor/superconductor interface. Yttria-stabilized zirconia (YSZ), Y2O3, MgO, SrTiO3, CeO2 and their combinations have been proposed and used as buffer layers in the case of Si/YBCO systems. In this paper we report on annealing treatments performed on Si/CeO2 bilayers. A set of optimized samples with deposition temperatures ranging from 100°C to 800°C has been radiatively heated at two different …