Semiconductor Devices, Materials, and Processing-Structural and Optical Properties of Oxidized Porous Silicon Layers Activated by Zn2SiO4: Mn2

Data di pubblicazione: 1 Gen 2002

RivistaFonte dati: ARCHIVIO
Editore
New York, NY: Electrochemical Society, 1948-
Fonte
Journal of the Electrochemical Society
ID archivio
8df2064ac5fb38b1bda5ec924ff99c81
Riferimenti
Volume: 149 Issue: 4 Pages: G251