Resistive Random Access Memory (RRAM) Technology: From Material, Device, Selector, 3D Integration to Bottom-Up Fabrication

Hong-Yu Chen; Stefano Brivio; Che‐Chia Chang; Jacopo Frascaroli; Tuo‐Hung Hou; Boris Hudec; Ming Liu; Hangbing Lv; G. Molas; Joon Sohn; Sabina Spiga; V. Mani Teja; Elisa Vianello; H.‐S. Philip Wong

doi:10.1007/978-3-030-42424-4_3

LibroFonte dati: OPENALEXTipo OpenAlex: book-chapterAccesso chiuso

Autori: Hong-Yu Chen, Stefano Brivio, Che‐Chia Chang, Jacopo Frascaroli, Tuo‐Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, G. Molas, Joon Sohn, Sabina Spiga, V. Mani Teja, Elisa Vianello, H.‐S. Philip Wong

Fonte

Kluwer international series in electronic materials: science and technology

Pagine

33-64

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Resistive Random Access Memory (RRAM) Technology: From Material, Device, Selector, 3D Integration to Bottom-Up Fabrication

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