Semiconductor Devices, Materials, and Processing-Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks

Data di pubblicazione: 1 Gen 2009

RivistaFonte dati: ARCHIVIO
Fonte
Journal of the Electrochemical Society
ID archivio
905f5a0ce2333c5cb7a3aab79d2d6f15
Riferimenti
Volume: 156 Issue: 1 Pages: H1