In high performance polysilicon thin film transistors (TFTs) the uniformity of electrical characteristics remain a major problem. This situation has stimulated a growing activity aiming to control the lateral growth phenomenon. However, most of the techniques require additional processing steps or a rather high shot density. We present a technique based on a two-pass excimer laser crystallization process: during the first irradiation the sample is irradiated through a patterned mask, while the second irradiation, performed without the mask, results in the homogeneous crystallization of the sample. This technique allows the possibility of forming uniform polysilicon layers, with large (∼2 micron) and aligned grains, with a reduced number of shots and a relatively large process energy window. The results of crystallization performed at different laser energy densities, sample thickness and laser pulse duration are analyzed.