A new working mode of scanning capacitance microscopy (SCM) is presented, extending the possibilities of the measurement from lock-in amplitude mapping to recording of capacitance transients arising as response of abrupt bias changes. Effect of Au doping in Si on SCM and scanning capacitance transient spectroscopy (SCTS) was observed. The decay time of capacitance transient, measured locally on slightly doped region shows good agreement with the conventional DLTS results.