Scanning capacitance microscopy was performed on bevelled samples to improve the resolution. The dependence of the reverse junction carrier spilling on the bevel angle has been investigated for P and B ion-implanted Si samples. We show an increase of this effect decreasing the bevel angle from 5°44′ to 1°9′. Moreover, the depletion region amplitude measured on the bevelled surface is narrower than on the cross section. We have also studied the spilling dependence on the dopant profile shape and we have found that it increases with the profile slope decreasing in the low concentration region near the junction.