LETTERS Compound Semiconductor Devices Optically Modulated High-Sensitivity Heterostructure Varactor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . X. Zhao, A. Cola, A. Tersigni, F. Quaranta, E. Gallo, JE Spanier, and B. Nabet … High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, SP DenBaars, and UK Mishra  … The 1.6-kV AlGaN/GaN HFETs . . . . . . N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. Asif Khan … AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN . . . . . . . . . . . . . . . . M. Higashiwaki, T. Mimura, and T. Matsui … A Capless InP/In0.52Al0.48As/In0.53Ga0 .47As p-HEMT Having a Self-Aligned Gate Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T.-W. Kim, SJ Jo, and J.-I. Song