We monitored the defect migration and interaction with impurities and dopant atoms using in situ (leakage current, I L) and ex situ deep level transient spectroscopy (DLTS) techniques. n-Type and p-type Si samples were implanted with He or Si at energies of 0.04–10 MeV to doses of 10 9–10 14 cm− 2 and dose rates of 10 7–10 12 cm− 2 s− 1 and the depth profiles of the room temperature (RT) stable complexes studied. Through I L we monitored defect diffusion effects in reverse biased junctions, during and after implantation and observed that I L is mostly given by vacancy-type defects in both n-type and p-type Si. When the implantation dose is above a threshold (2× 10 13 He cm− 2 for 1 MeV He) a strong difference arises in the defect generation in p-type Si, suggesting a different defect evolution due to the B presence.