In the last years semiconductor’s nanocrystals (NCs) have attracted a strong attention of many researchers mainly due to their size-dependent optoelectronic properties. Si, Ge, and their alloy nanostructures embedded in dielectric matrices have been a subject of huge interest due to their potential applications in nanoelectronics and optoelectronics, as well as floating gate memory structures [1, 2]. The distribution of NCs and their structural properties dramatically affect performance and reliability of NCs based devices. In these frames an investigation of a correlation between structural and electrical properties is an important task.In this work, we have studied the structural properties of Si1-xGex NCs embedded in SiO2 matrix grown by RF-magnetron sputtering technique on Si (100) substrate under different conditions with subsequent post growing annealing in nitrogen atmosphere. The lateral size, shape and …