Modulation instability in RF MEMS devices

Data di pubblicazione: 1 Apr 2012

RivistaFonte dati: ARCHIVIO

Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than −40 dB the spectral purity of microwave sources.

Editore
Springer US
Fonte
Analog Integrated Circuits and Signal Processing
ID archivio
e08dfb2585573ae8eae32bd838e60af5
Riferimenti
Volume: 71 Pages: 59-67