Over the past few years, significant research effort is concentrated on replacing the traditional SiO2 dielectric in CMOS devices with a high-k dielectric [1]. Out of the numerous dielectrics investigated for that purpose, HfO2 and HfSiOx attract a lot of attention due to their high dielectric constants and their general electrical properties [1-4]. The use of a very thin layer of high quality SiO2 between the high-k dielectric and the Si is considered a crucial step towards reducing surface roughness and leakage currents [2, 3]. Another step towards improving oxide characteristics is nitridation. One of the goals of the ANNA (*) project is optimizing analytical techniques such as MEIS and XTEM, but also electrical measurement techniques in order to investigate the properties of such thin high-k dielectric films. Another is to compare results gained by the different methods. The ability to measure the properties of such thin layers …