The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C 60 bis-adduct thin films

Data di pubblicazione: 1 Gen 2015

RivistaFonte dati: OPENALEXTipo OpenAlex: articleOpen Access
Autori: Emanuele Orgiu, Marco Antonio Squillaci, Wassima Rekab, Karl Börjesson, Fabiola Liscio, Lei Zhang, Paolo Samorı́

Herein we report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C60 bis-adduct (ICBA). In particular, the effects of annealing temperature and duration as well as surface functionalization are explored. Electron mobilities approaching 0.1 cm2 V−1 s−1 are reported.

Editore
Royal Society of Chemistry
Fonte
Chemical Communications
Volume
51
Fascicolo
25
Pagine
5414-5417
Citazioni
10
ID archivio
ea03d0c6c5f54e4cc6c8b000840f662c
Riferimenti
Volume: 51 Issue: 25 Pages: 5414-5417