We used scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) to determine the drift hole mobility in nanometer thick Si∕Si0.75Ge0.25∕Si quantum wells (QWs), from the carrier concentration profiles (obtained by SCM) and the local resistivity values (obtained by SSRM). A relevant decrease of the hole mobility at room temperature was observed when reducing the QW width from 10 nm down to 1 nm. This effect has been explained in terms of the increasing role of surface scattering at the Si∕SiGe interface for lower QW widths.