The temperature dependence of the bulk and periphery forward current components of vertical 4H-SiC p+-in diodes, with Al+ implanted circular anodes of diameters in the range 150-1000 mm, have been obtained from the analysis of the results of forward current-voltage measurements in the temperature range 30-290 C. The zero voltage bulk and periphery current densities at different temperatures have been used to compute the temperature dependence of:(i) the effective carrier lifetime in the space charge region,(ii) the minority carrier diffusion coefficient to lifetime ratio in the base region, and (iii) a surface quality parameter.