Ferroelectric molecular compounds present great advantages for application in electronics because they combine high polarization values, comparable to those of inorganic materials, with the flexibility and low-cost properties of organic ones. However, some limitations to their applicability are related to the high crystallinity required to deploy ferroelectricity. In this article, highly ordered ferroelectric patterned thin films of diisopropylammonium bromide have been successfully fabricated by a lithographically controlled wetting technique. Confinement favors the self-organization of ferroelectric crystals, avoiding the formation of polymorphs and promoting the long-range orientation of crystallographic axes. Patterned structures present high stability, and the polarization can be switched to be arranged in stable domain pattern for application in devices.