2011 | IMM Container

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

Xavier Jehl, B Roche, Marc Sanquer, B Voisin, Romain Wacquez, Veeresh Deshpande, Bernard Previtali, Maud Vinet, J Verduijn, GC Tettamanzi, S Rogge, D Kotekar-Patil, M Ruoff, D Kern, DA Wharam, M Belli, E Prati, M Fanciulli

2011-12-31

Biblio references: Volume: 7 Pages: 266-268

Origin: Procedia Computer Science

Biologically inspired computation for chemical sensing

Jordi Fonollosa, Agustin Gutierrez-Galvez, Anders Lansner, Dominique Martinez, Jean-Pierre Rospars, Romeo Beccherelli, Alexandre Perera, Tim Pearce, Paul Vershure, Krishna Persaud, Santiago Marco

2011-12-31

Biblio references: Volume: 7 Pages: 226-227

Origin: Procedia Computer Science

Facile sensors replacement in optical gas sensors array

D Polese, G Magna, F Dini, E Martinelli, R Paolesse, A D’Amico, D Filippini, I Lundström, C Di Natale

2011-12-31

Biblio references: Volume: 25 Pages: 35-38

Origin: Procedia Engineering

Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As

L Lamagna, A Molle, C Wiemer, S Spiga, C Grazianetti, G Congedo, M Fanciulli

2011-12-30

Biblio references: Volume: 159 Issue: 3 Pages: H220

Origin: Journal of The Electrochemical Society

Exchange-correlation effects in the monoclinic to tetragonal phase stabilization of yttrium-doped ZrO 2: A first-principles approach

Davide Sangalli, Alberto Debernardi

2011-12-27

Biblio references: Volume: 84 Issue: 21 Pages: 214113

Origin: Physical Review B

Smart high-κ nanodielectrics using solid supported polyoxometalate-rich nanostructures

Chiara Musumeci, Mali H Rosnes, Filippo Giannazzo, Mark D Symes, Leroy Cronin, Bruno Pignataro

2011-12-27

Biblio references: Volume: 5 Issue: 12 Pages: 9992-9999

Origin: ACS nano

Publisher’s Note:“Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors”[Appl. Phys. Lett. 99 …

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

2011-12-19

Biblio references: Volume: 99 Issue: 25 Pages: 259901

Origin: Applied Physics Letters

Amorphous-Crystal Phase Transitions in GexTe1-x Alloys

E Carria, AM Mio, S Gibilisco, M Miritello, C Bongiorno, MG Grimaldi, E Rimini

2011-12-19

Biblio references: Volume: 159 Issue: 2 Pages: H130

Origin: Journal of The Electrochemical Society

Using High Pressure to Prepare Polymorphs of the Ba2Co1–x Zn x S3 (0≤ x≤ 1.0) Compounds

Francesco Mezzadri, Edmondo Gilioli, Gianluca Calestani, Andrea Migliori, Mark R Harrison, David A Headspith, M Grazia Francesconi

2011-12-16

Biblio references: Volume: 51 Issue: 1 Pages: 397-404

Origin: Inorganic chemistry

Observation of tunable optical filtering in photosensitive composite structures containing liquid crystals

Giovanni Gilardi, Luciano De Sio, Romeo Beccherelli, Rita Asquini, Antonio d’Alessandro, Cesare Umeton

2011-12-15

Biblio references: Volume: 36 Issue: 24 Pages: 4755-4757

Origin: Optics letters

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

Biologically inspired computation for chemical sensing

Facile sensors replacement in optical gas sensors array

Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As

Exchange-correlation effects in the monoclinic to tetragonal phase stabilization of yttrium-doped ZrO 2: A first-principles approach

Smart high-κ nanodielectrics using solid supported polyoxometalate-rich nanostructures

Publisher’s Note:“Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors”[Appl. Phys. Lett. 99 …

Amorphous-Crystal Phase Transitions in GexTe1-x Alloys

Using High Pressure to Prepare Polymorphs of the Ba2Co1–x Zn x S3 (0≤ x≤ 1.0) Compounds

Observation of tunable optical filtering in photosensitive composite structures containing liquid crystals

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