In this work, we report on the competition between two-step two photon absorption, carrier recombination, and escape in the photocurrent generation mechanisms of high quality InAs/GaAs quantum dot intermediate band solar cells. In particular, the different role of holes and electrons is highlighted. Experiments of external quantum efficiency dependent on temperature and electrical or optical bias (two-step two photon absorption) highlight a relative increase as high as 38% at 10 K under infrared excitation. We interpret these results on the base of charge separation by phonon assisted tunneling of holes from quantum dots. We propose the charge separation as an effective mechanism which, reducing the recombination rate and competing with the other escape processes, enhances the infrared absorption contribution. Meanwhile, this model explains why thermal escape is found to predominate over two-step two photon absorption starting from 200 K, whereas it was expected to prevail at lower temperatures (≥70 K), solely on the basis of the relatively low electron barrier height in such a system.