Self-Assembled Metal Nanostructures in Semiconductor Structures

Data di pubblicazione: 1 Gen 2009

LibroFonte dati: OPENALEXTipo OpenAlex: book-chapterAccesso chiuso
Autori: Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, VITO RAINERI, Maria Grazia Grimaldi

Understanding the effects of downscaling the devices’ dimensions to the nanometer size is one of the most important topics in the modern material science applied to microelectronics. In fact, the confinement of electrons in dimensions typical of atoms and molecules obliges to consider their quantum behavior. Therefore, a new class of effects is characterization of ultra-scaled devices. In the last years, these ideas led to the birth of the “nanotechnology and nanoelectronic revolution” with the aim to understand the effects of downscaling the matter in the atomic range and to develop innovative nanostructured materials and quantum effects–based devices following a bottom-up procedure with respect to the traditional top-down scaling scheme.In particular, the nanometric level knowledge of the structural characteristics of such innovative materials and the nanometric control and manipulation of these …

Editore
Springer, New York, NY
Fonte
Toward Functional Nanomaterials
Pagine
127-171
Citazioni
4
ID archivio
ae962b68010309a3a0ab2c6ba55d27f4
Riferimenti
Pages: 127-171